RQJ0306FQDQATL-E datasheet(5/8 Pages) RENESAS

Part #	RQJ0306FQDQATL-E

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 8 page

RQJ0306FQDQA

REJ03G1719-0100 Rev.1.00 Jul 28, 2008

Page 5 of 7

Dynamic Input Characteristics

Gate Charge Qg (nC)

Switching Characteristics

Drain Current ID (A)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Input Capacitance vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Reverse Drain Current vs.

Source to Drain Voltage

Source to Drain Voltage VSD (V)

Body-Drain Diode Forward Voltage vs.

Case Temperature

Case Temperature Tc (°C)

1

10

100

1000

–0

–5

–10

–15

–20

–30

–25

0

–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4

–4

–2

–6

–8

Crss

Coss

VGS = 0 V

f = 1 MHz

Ciss

700

750

800

850

900

950

–10 –8 –6 –4 –2

0

2

4

6

8 10

650

0

–10

VDS = 0

f = 1MHz

VGS = 2.5, 4.5, 10 V

Pulse Test

Tc = 25

°C

–4.5 V

–2.5 V

–10 V

–0 V

0

–4

–6

4

26

8

10

–8

–2

0

–20

–30

–40

–10

0

ID = –3 A

Tc = 25

°C

VDD = –10 V

–25 V

VDD = –10 V

–25 V

1000

100

10

1

–0.01

–0.1

–1

–10

VGS = –4.5 V, VDD = –10 V

Rg = 4.7

Ω, duty ≤ 1 %

Tc = 25

°C

tr

tf

td(off)

td(on)

–0.2

–0.3

–0.4

–0.5

–0.6

–25

0

25

50

75

100 125 150

–1 mA

ID = –10 mA

VGS = 0

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