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RQJ0301HGDQSTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RQJ0301HGDQSTL-E
Description  Silicon P Channel MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0301HGDQSTL-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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RQJ0301HGDQS
Rev.3.00 Jun 05, 2006 page 3 of 6
Main Characteristics
–10
–8
–6
–4
–2
–2.2 V
–10 V
0
0
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (
°C)
2.0
1.5
0.5
0
1.0
0
25
75
100
125
150
50
–0.01
–0.1
–1
–10
–100
–0.01
–0.1
–1
–10
–100
0
–2
–1
–3
–5
–4
–6
–2
–1
–3
–5
–4
–6
0–3
–1
–4
–2
–5
–0.0001
–0.001
–0.01
–0.1
0
–0.5
–1
–1.5
–2
–2.5
–3
–0.5
–1
–1.5
–2
–25
0
25
50
75
100 125 150
VDS = –10 V
Pulse Test
–25
°C
Tc = 75
°C
VDS = –10 V
Pulse Test
ID = –10 mA
–1 mA
–0.1 mA
VDS = –10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
25
°C
VGS = 0 V
Pulse Test
Tc = 25
°C
–2.3 V
–2.4 V
–2.5 V
–2.6 V
–2.7 V
–2.8 V
–2.9 V
–3.0 V
–3.5 V
Ta = 25
°C
1 Shot Pulse
100
µs
PW
=
10
m
s
1 ms
DC
Oper
ation
*When using the glass epoxy board (FR-4: 40
× 40 × 1 mm)
Operation in this area
is limited by RDS(on)


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