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RQA0011DNSTB-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQA0011DNSTB-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 18 page REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Page 1 of 17 RQA0011DNS Silicon N-Channel MOS FET REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm) • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline 1. Gate 2. Source 3. Drain 1 3 2 RENESAS Package code: PWSN0002ZA-B (Package name: HWSON-2 <WSON0504-2>) 1 32 1 32 Note: Marking is “RQA0011”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 16 V Gate to source voltage VGSS ±5 V Drain current ID 3.8 A Channel dissipation Pch note 15 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: Value at Tc = 25 °C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. |
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