REJ03G1600-0100 Rev.1.00 Nov 08, 2007

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RQA0011DNS

Silicon N-Channel MOS FET

REJ03G1600-0100

Rev.1.00

Nov 08, 2007

Features

• High output power, High gain, High efficiency

Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz)

• Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

• Electrostatic Discharge Immunity Test

(IEC Standard, 61000-4-2, Level4)

Outline

1. Gate

2. Source

3. Drain

1

3

2

RENESAS Package code: PWSN0002ZA-B

(Package name: HWSON-2 <WSON0504-2>)

1

32

1

32

Note:

Marking is “RQA0011”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

16

V

Gate to source voltage

±5

V

Drain current

3.8

A

Channel dissipation

Pch

note

15

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: Value at Tc = 25

°C

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.