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STS6DNF30V Datasheet(PDF) 3 Page - STMicroelectronics |
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STS6DNF30V Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STS6DNF30V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15 V, ID = 3 A RG = 4.7Ω VGS = 2.5V (see test circuit, Figure 3) 20 ns tr Rise Time 25 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 6 A, VGS = 2.5 V 6.8 2 3.4 9.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 10 V, ID = 3 A, RG =4.7Ω, VGS = 2.5 V (see test circuit, Figure 3) 32 13 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) 25 21 1.7 ns nC A Safe Operating Area Thermal Impedance |
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