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2SJ217-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SJ217-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SJ217 Rev.2.00 Sep 07, 2005 page 4 of 6 0.1 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.02 0.04 0.06 0.08 Static Drain to Source on State Resistance vs. Temperature Pulse Test –10 V VGS = –4 V ID = –50 A ID = –20 A –10 A, –20 A –10 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 200 100 20 50 10 2 5 –0.5 –1 –2 –5 –10 –20 –50 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.5 –1 –2 –5 –10 –20 –50 5000 2000 1000 200 500 100 50 di / dt = 50 A / µs, V GS = 0 Ta = 25°C, Pulse Test 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 200 100 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 40 80 120 160 200 VDS VGS VDD = –10 V –25 V –50 V VDD = –10 V –25 V –50 V ID = –45 A 1000 500 200 50 100 20 10 –1 –2 –5 –10 –20 –50 –0.5 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % |
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