 |
 |
|
| STB230NH03L |
|
|||||||||||||||||
 STMICROELECTRONICS
|
| |||||||||||||||||
|
5 page 
STB230NH03L Electrical characteristics 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15V, ID=60A, RG=4.7Ω, VGS=10V 11 322 ns ns td(off) tf Turn-off delay time Fall time VDD=15V, ID=60A, RG=4.7Ω, VGS=10V 123 102 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) ISDM (2) 1. This value is silicon limited 2. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 250 1000 A A VSD (3) 3. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=40A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=20V, Tj=25°C 42 34.7 1.6 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=20V, Tj=150°C 47 41.3 1.8 ns nC A |
