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STS4DPF30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4DPF30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STS4DPF30L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 2 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 25 35 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24 V ID= 4 A VGS= 5 V (See test circuit, Figure 2) 12.5 5 3 16 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 2 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 125 35 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 4 16 A A VSD (*) Forward On Voltage ISD = 4 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (See test circuit, Figure 3) 45 36 1.6 ns nC A ELECTRICAL CHARACTERISTICS (continued) |
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