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STS4DNFS30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4DNFS30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STS4DNFS30L Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15 V, ID = 2 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 1) 11 ns tr Rise Time 100 ns Qg Total Gate Charge VDD = 24 V, ID = 4 A, VGS = 5 V 6.5 9 nC Qgs Gate-Source Charge 3.6 nC Qgd Gate-Drain Charge 2 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V, ID = 2 A, RG =4.7Ω, VGS = 5 V (see test circuit, Figure 1) 25 22 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.2 V trr Reverse Recovery Time ISD = 4 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 3) 35 ns Qrr Reverse Recovery Charge 25 nC IRRM Reverse Recovery Current 1.4 A Safe Operating Area 1. |
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