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STS4DNF30L Datasheet(PDF) 2 Page - STMicroelectronics |
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STS4DNF30L Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page STS4DNF30L 2/6 THERMAL DATA MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-amb (*)Thermal Resistance Junction-ambient Max 62.5 °C/W Tstg Storage Temperature Range -55 to 150 °C Tl Junction Temperature 150 °C (*) Mounted on FR-4 board (t ≤ 10sec) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 16 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 1V RDS(on) Static Drain-source On Resistance VGS =10V, ID =2 A 0.039 0.050 Ω VGS = 4.5V, ID =2 A 0.046 0.060 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID =2A 13 S Ciss Input Capacitance VDS = 25V,f= 1MHz,VGS =0 330 pF Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 40 pF |
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