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3SK319 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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3SK319 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  3SK319 Rev.2.00 Aug 10, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S ±6 V Gate2 to source voltage VG2S ±6 V Drain current ID 20 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS ±6 — — V IG1 = ±10 µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±6 — — V IG2 = ±10 µA, VG1S = VDS = 0 Gate1 to source cutoff current IG1SS — — ±100 nA VG1S = ±5 V, VG2S = VDS = 0 Gate2 to source cutoff current IG2SS — — ±100 nA VG2S = ±5 V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V VDS = 5 V, VG2S = 3 V, ID = 100 µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5 V, VG1S = 3 V, ID = 100 µA Drain current IDS(op) 0.5 4 10 mA VDS = 3.5 V, VG1S = 1.1 V, VG2S = 3 V Forward transfer admittance |yfs| 18 24 32 mS VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 1 kHz Input capacitance Ciss 1.3 1.6 1.9 pF Output capacitance Coss 0.9 1.2 1.5 pF Reverse transfer capacitance Crss — 0.019 0.03 pF VDS = 3.5V, VG2S = 3V ID = 10mA , f = 1MHz Power gain PG 18 21 — dB Noise figure NF — 1.4 2.2 dB VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 900 MHz |
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