STS3DPF30L datasheet(3/5 Pages) STMICROELECTRONICS

Part #	STS3DPF30L

Description	DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 5 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 15 V

ID = 1.5 A

RG = 4.7

Ω

VGS = 4.5 V

(Resistive Load, see fig. 3)

14.5

37

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 24 V ID = 3 A VGS = 4.5 V

5.5

1.7

1.8

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 15 V

ID = 1.5 A

RG = 4.7

Ω

VGS = 4.5 V

(Resistive Load, see fig. 3)

88

23

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

3

12

A

VSD (

∗)

Forward On Voltage

ISD =3 A

VGS = 0

1.2

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 3 A

di/dt = 100 A/

µs

VDD = 15 V

Tj = 150

oC

(see test circuit, fig. 5)

T.B.D

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STS3DPF30L

3/5

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