3SK297 datasheet(7/9 Pages) RENESAS

Part #	3SK297

Description	Silicon N-Channel Dual Gate MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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7 / 9 page

3SK297

Rev.3.00 Aug 10, 2005 page 7 of 8

S Parameter

(VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50

Ω)

S11

S21

S12

S22

Freq.

(MHz)

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

50

0.994

–5.8

2.04

173.6

0.00116

76.9

0.993

–2.2

100

0.993

–11.0

2.02

167.4

0.00132

85.7

0.993

–4.5

150

0.986

–16.8

2.00

161.5

0.00229

78.2

0.991

–6.4

200

0.980

–22.5

1.98

155.5

0.00313

73.5

0.990

–8.5

250

0.973

–27.8

1.94

149.6

0.00427

68.7

0.987

–10.5

300

0.950

–33.0

1.90

142.6

0.00473

63.9

0.985

–12.5

350

0.936

–38.3

1.86

137.1

0.00536

64.3

0.982

–14.4

400

0.924

–43.4

1.83

131.6

0.00561

64.5

0.979

–16.2

450

0.912

–48.0

1.77

126.8

0.00562

60.9

0.975

–18.2

500

0.893

–52.5

1.71

121.0

0.00640

53.5

0.971

–20.2

550

0.874

–57.3

1.67

115.5

0.00638

49.3

0.967

–22.0

600

0.859

–62.0

1.64

111.1

0.00647

49.0

0.964

–23.9

650

0.846

–66.1

1.58

106.7

0.00667

50.2

0.960

–25.8

700

0.829

–69.8

1.50

102.1

0.00694

49.3

0.955

–27.6

750

0.810

–74.2

1.46

97.1

0.00661

46.6

0.952

–29.4

800

0.802

–78.0

1.44

92.7

0.00618

43.7

0.948

–31.2

850

0.791

–81.6

1.38

88.9

0.00622

44.7

0.944

–33.2

900

0.778

–84.6

1.34

84.2

0.00615

43.6

0.940

–35.1

950

0.756

–88.5

1.30

80.2

0.00576

45.1

0.935

–36.8

1000

0.751

–92.2

1.26

75.9

0.00562

40.7

0.932

–38.5

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