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3SK295 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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3SK295 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.3.00, Aug 10.2005, page 1 of 6 3SK295 Silicon N-Channel Dual Gate MOS FET REJ03G0814-0300 (Previous ADE-208-387A) Rev.3.00 Aug. 10, 2005 Application • UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 1. Source 2. Gate1 3. Gate2 4. Drain RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 1 4 3 2 Note: Marking is “ZQ–” Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. |
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