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2SK3391 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK3391 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Page 1 of 9 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting Outline 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source 1 3 2, 4 RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK ) R Note: Marking is “JX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 17 V Gate to source voltage VGSS ±10 V Drain current ID 0.3 A Drain peak current ID(pulse) Note1 0.75 A Channel dissipation Pch Note2 5 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Notes: 1. PW < 1sec, Tch < 150°C 2. Value at Tc = 25°C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. |
Similar Part No. - 2SK3391_07 |
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Similar Description - 2SK3391_07 |
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