Part Name
         Description
2SK3140

 Silicon N Channel MOS FET High Speed Power Switching ( 8 Page)


RENESAS
100% 
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2SK3140
Rev.5.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
24
6
8
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
µs
100
µs
1 ms
Operation in
this area is
limited by RDS(on)
PW
=
10
ms
(1
shot)
3.5 V
3 V
10
VGS = 10 V
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
VDS = 10 V
Pulse Test
Pulse Test
DC
Operat
ion
(Tc
=
25
°C)
0
48
12
16
20
2.0
1.6
1.2
0.8
0.4
Pulse Test
ID = 50 A
20 A
10 A
1
20
100
2
100
2
5
1
10
200
20
10
VGS = 4 V
10 V
Pulse Test
50
50
5



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