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STS25NH3LL Datasheet(PDF) 2 Page - STMicroelectronics |
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STS25NH3LL Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Electrical ratings STS25NH3LL 2/11 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ± 18 V ID (1) 1. This value is rated according to Rthj-pcb Drain current (continuous) at TC = 25 °C 25 A ID Drain current (continuous) at TC=100 °C 18 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 100 A PTOT (1) Total dissipation at TC = 25 °C 3.2 W Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t< 10 sec Thermal resistance junction-amb max 47 °C/W Tj Tstg Operation junction temperature Storage temperature -55 to 175 °C Table 4. Avalanche characteristics Symbol Parameter Value Unit IAV Not-repetitive avalanche current (pulse width limited by Tj max.) 12.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 24 V) 1.3 J |
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