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STS1HNC60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS1HNC60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STS1HNC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 300V, ID = 0.7 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 8ns tr 8ns Qg Total Gate Charge VDD = 480V, ID = 1.4 A, VGS = 10V, RG =4.7Ω 8.5 11.5 nC Qgs Gate-Source Charge 2.8 nC Qgd Gate-Drain Charge 2.8 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480 V, ID = 1.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 25 ns tf Fall Time 9 ns tc Cross-over Time 34 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 0.4 A ISDM (2) Source-drain Current (pulsed) 1.6 A VSD (1) Forward On Voltage ISD = 0.4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 500 ns Qrr Reverse Recovery Charge 950 µC IRRM Reverse Recovery Current 3.8 A |
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