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STS1HNC60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STS1HNC60
Description  N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?줚I MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS1HNC60 Datasheet(HTML) 3 Page - STMicroelectronics

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STS1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 300V, ID = 0.7 A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
8ns
tr
8ns
Qg
Total Gate Charge
VDD = 480V, ID = 1.4 A,
VGS = 10V, RG =4.7Ω
8.5
11.5
nC
Qgs
Gate-Source Charge
2.8
nC
Qgd
Gate-Drain Charge
2.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480 V, ID = 1.4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
25
ns
tf
Fall Time
9
ns
tc
Cross-over Time
34
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
0.4
A
ISDM (2)
Source-drain Current (pulsed)
1.6
A
VSD (1)
Forward On Voltage
ISD = 0.4 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 1.4 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
500
ns
Qrr
Reverse Recovery Charge
950
µC
IRRM
Reverse Recovery Current
3.8
A


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