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STS10NF30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS10NF30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =15 V ID =5 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 25 280 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =24 V ID =10 A VGS =10 V 25 11 12 35 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =15 V ID =5 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 40 60 ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD ( ∗)Forward On Voltage ISD =10 A VGS =0 1. 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A di/dt = 100 A/ µs VDD =15 V Tj =150 oC (see t est circuit, f ig. 5) 45 52 2.3 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STS10NF30L 3/6 |
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