Part Name
         Description
HRB0103B

 Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ( 6 Page)


RENESAS
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HRB0103B
Rev.2.00 May 10, 2005 page 2 of 5
Absolute Maximum Ratings *
1
(Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average rectified current
IO*
2
100
mA
Non-Repetitive peak forward surge current
IFSM *
3
3
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Notes
: 1. Per one device.
2. See Fig.5, Two device total.
3. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
0.44
V
IF = 100 mA
Reverse current
IR
50
µA
VR = 30 V



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