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2SK1671 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1671 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1671 Rev.2.00 Sep 07, 2005 page 4 of 6 0.2 40 160 Case Temperature TC (°C) 0.16 0.04 0 80 120 0 0.08 0.12 Static Drain to Source on State Resistance vs. Temperature ID = 30 A VGS = 10 V Pulse Test –40 10 A 20 A 50 150 Drain Current ID (A) 20 2 0.5 2 10 0.5 5 10 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 1 520 75 °C TC = –25°C 25 °C 200 5 100 10 0.5 20 50 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Ta = 25 °C, Pulse Test 5 110 20 2 500 50 Reverse Drain Current IDR (A) 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 500 80 200 Gate Charge Qg (nc) 400 40 120 0 160 300 200 100 ID = 30 A Pulse Test VDS Dynamic Input Characteristics VDD = 50V 100 V 200 V VGS 20 16 12 8 4 0 0 VDD = 200 V 100 V 50 V 500 250 Drain Current ID (A) 200 20 15 20 5 50 100 0.5 10 Switching Characteristics tf td (off) tr VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% td (on) 10 = . . |
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