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2SJ552 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SJ552 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 9 page 2SJ552(L), 2SJ552(S) Rev.4.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –20 A Drain peak current ID (pulse) Note 1 –80 A Body to drain diode reverse drain current IDR –20 A Avalanche current IAP Note 3 –20 A Avalanche energy EAR Note 3 34 mJ Channel dissipation Pch Note 2 75 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V RDS (on) — 0.042 0.055 Ω ID = –10 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.065 0.095 Ω ID = –10 A, VGS = –4 V Note 4 Forward transfer admittance |yfs| 10 16 — S ID = –10 A, VDS = –10 V Note 4 Input capacitance Ciss — 1750 — pF Output capacitance Coss — 800 — pF Reverse transfer capacitance Crss — 180 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 16 — ns Rise time tr — 100 — ns Turn-off delay time td (off) — 230 — ns Fall time tf — 140 — ns VGS = –10 V ID = –10 A RL = 3 Ω Body to drain diode forward voltage VDF — –1.0 — V IF = –20 A, VGS = 0 Body to drain diode reverse recovery time trr — 100 — ns IF = –20 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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