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2SB1025 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SB1025
Description  Silicon PNP Epitaxial
Download  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SB1025 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SB1025
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
50
100
150
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
0
–2–4–6–8
–10
–1.0
–0.8
–0.6
–0.2
–0.4
IB = 0
–0.5 mA
–1
–2
–5
–10
–20
–30
–40
–60
–80
–100
–120
Typical Output Characteristics
–1
–2
–5
–10
–20
–50
–100
–200
–500
Base to Emitter Voltage VBE (V)
–0.2
–0.4
0
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100 –300 –1,000
0
100
200
300
400
500
600
Ta = 75
°C
25
–25
VCE = –5 V
Pulse
Saturation Voltage vs. Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100 –300 –1,000
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
IC = 10 IB
Pulse
VBE (sat)
VCE (sat)
25
25
75
–25
Ta = 75
°C
Ta =
–25°
C
Gain Bandwidth Product vs.
Collector Current
100
200
300
Collector Current IC (mA)
–10
–30
–100
–300
–1,000
VCE = –5 V


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