Part Name
         Description
2SA1566

 Silicon PNP Epitaxial ( 6 Page)


RENESAS
100% 
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2SA1566
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
50
100
150
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
150
100
50
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
0
–4
–8
–12
–16
–20
–4
–6
–8
IB = 0
–2
µA
–10
–12
–14
–16
–18
–20
Pulse
–10
–8
–6
–4
–2
Typical Transfer Characteristics
–0.1
–1.0
–10
–100
Base to Emitter Voltage VBE (V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –6 V
Pulse
Ta = 75
°C
25
–25
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100
10
30
100
300
1,000
Ta = 75
°C
25
–25
VCE = –12 V
Pulse
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100
–0.01
–0.03
–0.1
–0.3
–1.0
IC = 10 IB
Pulse
Ta = 75
°C
25
–25
Gain Bandwidth Product vs.
Collector Current
10
20
100
50
200
1,000
500
Collector Current IC (mA)
–0.5 –1.0
–2
–5
–10 –20
–50
VCE = –6 V
Pulse



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