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2SA844CTZ Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SA844CTZ
Description  Silicon PNP Epitaxial
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA844CTZ Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SA844
Rev.2.00 Aug 10, 2005 page 3 of 4
Main Characteristics
Collector to Emitter Voltage VCE (V)
0
Typical Output Characteristics
–10
–8
–6
–4
–2
–10
–8
–6
–4
–2
IB = 0
–5
µA
–10
–15
–20
–25
–30
Typical Transfer Characteristics
–10
µ
–20
µ
–50
µ
–100
µ
–200
µ
–500
µ
–1 m
–2 m
–5 m
–10 m
–20 m
–50 m
–100 m
Base to Emitter Voltage VBE (V)
–1.0
–0.8
–0.6
–0.4
–0.2
0
VCE = –12 V
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (A)
–10
µ
–100
µ
–1 m
–10 m
–50 m
10
100
1,000
10,000
VCE = –12 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
1
2
5
10
20
50
–1
–2
–5
–10
–20
–50
f = 1 MHz
IE = 0
0
100
200
300
50
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
100
150


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