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2SA844CTZ Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SA844CTZ Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page 2SA844 Rev.2.00 Aug 10, 2005 page 2 of 4 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –55 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –55 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –100 nA VCB = –18 V, IE = 0 Emitter cutoff current IEBO — — –50 nA VEB = –2 V, IC = 0 DC current transfer ratio hFE* 1 160 — 500 VCE = –12 V, IC = –2 mA Collector to emitter saturation voltage VCE(sat) — –0.1 –0.5 V IC = –10 mA, IB = –1 mA Base to emitter voltage VBE — –0.66 –0.75 V VCE = –12 V, IC = –2 mA Gain bandwidth product fT — 200 — MHz VCE = –12 V, IE = –2 mA Collector output capacitance Cob — 2.0 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1. The 2SA844 is grouped by hFE as follows. C D 160 to 320 250 to 500 |
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