SGSD200 datasheet(4/10 Pages) STMICROELECTRONICS

Part #	SGSD200

Description	Complementary power Darlington transistors

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

SGSD100 SGSD200

4/10

Es/b

Second breakdown energy

VCC = 30 V L = 3 mH

VCC = 30 V L = 3 mH TC = 100

oC

250

mJ

Is/b

Second breakdown current

VCE = 25 V t = 500 ms

6A

1.

Pulsed : Pulse duration = 300 µs, duty cycle

≤1.5%

Note:

For PNP type voltage and current values are negative

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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