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MRF5S19150HR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF5S19150HR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MRF5S19150HR3 MRF5S19150HSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg., Pout = 32 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — -36.5 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — -50 dB in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 427 2.44 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C CW Operation @ TC = 25°C Derate above 25°C CW 120 0.76 W W/°C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 32 W CW RθJC 0.41 0.44 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF5S19150H Rev. 2, 5/2006 Freescale Semiconductor Technical Data MRF5S19150HR3 MRF5S19150HSR3 1930-1990 MHz, 32 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 465C-02, STYLE 1 NI-880S MRF5S19150HSR3 CASE 465B-03, STYLE 1 NI-880 MRF5S19150HR3 © Freescale Semiconductor, Inc., 2006. All rights reserved. |
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