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MRF5S19100HR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF5S19100HR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 12 page 2 RF Device Data Freescale Semiconductor MRF5S19100HR3 MRF5S19100HSR3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 μAdc) VGS(th) — 2.7 — Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) — 3.7 — Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) gfs — 6.3 — S Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss — 2.2 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 13.9 — dB Drain Efficiency ηD 24 25.5 — % Intermodulation Distortion IM3 — -36.5 -35 dBc Adjacent Channel Power Ratio ACPR — -50.7 -48 dBc Input Return Loss IRL — -13 -9 dB 1. Part is internally matched both on input and output. |
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