2

RF Device Data

Freescale Semiconductor

MRF5S9070NR1

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

2

2.7

4

Vdc

Gate Quiescent Voltage

—

3.7

—

Vdc

Drain-Source On-Voltage

—

0.18

0.22

Vdc

Forward Transconductance

—

4.7

—

S

Dynamic Characteristic

Input Capacitance

—

126

—

pF

Output Capacitance

—

34

—

pF

Reverse Transfer Capacitance

—

1.37

—

pF

N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF

Power Gain

17

17.8

—

dB

Drain Efficiency

29

30

—

%

Adjacent Channel Power Ratio

ACPR

—

-47

-45

dBc

Input Return Loss

IRL

—

-19

-9

dB

Power Gain

—

16.4

—

dB

Drain Efficiency

—

62

—

%

Input Return Loss

IRL

—

-12

—

dB

(f = 940 MHz)

P1dB

—

68

—

W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system)

Power Gain

—

17

—

dB

Drain Efficiency

—

44

—

%

Error Vector Magnitude

EVM

—

1.5

—

%

Spectral Regrowth at 400 kHz Offset

SR1

—

-62

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

-78

—

dBc

(continued)