MRF284LR1 datasheet(7/12 Pages) FREESCALE

Part #	MRF284LR1

Description	RF Power Field Effect Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRF284LR1 MRF284LSR1

7

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 4. Output Power & Power Gain

versus Input Power

35

Pin, INPUT POWER (WATTS)

5

0

2.0

15

25

Figure 5. Output Power versus Frequency

10

1840

f, FREQUENCY (MHz)

45

25

15

1.0

3.0

3.5

35

1800

2000

0

30

13

9

6

1880

1920

Figure 6. Intermodulation Distortion Products

versus Output Power

−20

Pout, OUTPUT POWER (WATTS) PEP

−80

Figure 7. Power Gain and Intermodulation

Distortion versus Supply Voltage

11

VDD, DRAIN SUPPLY VOLTAGE (Vdc)

8

10

Figure 8. Intermodulation Distortion

versus Output Power

0.1

Pout, OUTPUT POWER (WATTS) PEP

−60

10

−30

Figure 9. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

8

1.0

12

10

1.0

0.1

9

10

11

10

6

20

22

16

−40

−20

−40

−35

VDD = 26 Vdc

IDQ = 200 mA

f = 2000 MHz Single Tone

40

24

26

28

13

12

−30

−25

−20

−15

−10

−70

−60

−50

−40

20

30

Pout = 30 W (PEP)

IDQ = 200 mA

f1 = 2000.0 MHz

f2 = 2000.1 MHz

Gps

3rd Order

7th Order

5th Order

Pin = 1 W

4 W

VDD = 26 Vdc

f1 = 2000.0 MHz

f2 = 2000.1 MHz

1.0

100 mA

IDQ = 400 mA

300 mA

200 mA

VDD = 26 Vdc

f1 = 2000.0 MHz

f2 = 2000.1 MHz

14

11

10

20

−30

18

VDD = 26 Vdc

IDQ = 200 mA

f1 = 2000.0 MHz

f2 = 2000.1 MHz

−50

Pout

1.5

0.5

2.5

VDD = 26 Vdc

IDQ = 200 mA

Single Tone

IMD

9

7

100 mA

IDQ = 400 mA

300 mA

200 mA

4.0

7

8

10

12

40

1860

1820

1900

1940 1960 1980

2 W

3 W

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