2

RF Device Data

Freescale Semiconductor

MRF6S23100HR3 MRF6S23100HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

3A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

1

2

3

Vdc

Gate Quiescent Voltage

2

2.8

4

Vdc

Drain-Source On-Voltage

0.1

0.21

0.3

Vdc

Forward Transconductance

—

5.3

—

S

Reverse Transfer Capacitance

—

1.5

—

pF

f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in

3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

14

15.4

17

dB

Drain Efficiency

22.5

23.5

—

%

Intermodulation Distortion

IM3

-35

-37

—

dBc

Adjacent Channel Power Ratio

ACPR

-38

-40.5

—

dBc

Input Return Loss

IRL

—

-10

—

dB

1. Part is internally matched both on input and output.