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MRF6S23100HSR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF6S23100HSR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 12 page 2 RF Device Data Freescale Semiconductor MRF6S23100HR3 MRF6S23100HSR3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 3A (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 2 2.8 4 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5.3 — S Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14 15.4 17 dB Drain Efficiency ηD 22.5 23.5 — % Intermodulation Distortion IM3 -35 -37 — dBc Adjacent Channel Power Ratio ACPR -38 -40.5 — dBc Input Return Loss IRL — -10 — dB 1. Part is internally matched both on input and output. |
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