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MRF1550N Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF1550N Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 18 page MRF1550NT1 MRF1550FNT1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 14.5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Broadband-Full Power Across the Band: 135-175 MHz • 200_C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +40 Vdc Gate-Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 165 0.50 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value(2) Unit Thermal Resistance, Junction to Case RθJC 0.75 °C/W Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 1 260 °C 1. Calculated based on the formula PD = 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Document Number: MRF1550N Rev. 13, 6/2008 Freescale Semiconductor Technical Data 175 MHz, 50 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs MRF1550NT1 MRF1550FNT1 CASE 1264-10, STYLE 1 TO-272-6 WRAP PLASTIC MRF1550NT1 CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC MRF1550FNT1 TJ– TC RθJC © Freescale Semiconductor, Inc., 2008. All rights reserved. |
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