MRF6VP3450HR6 datasheet(2/18 Pages) FREESCALE

Part #	MRF6VP3450HR6

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Download	18 Pages

Scroll/Zoom	100%

Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

Logo

2 / 18 page

2

RF Device Data

Freescale Semiconductor

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 90 W CW

Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle

RθJC

0.27

0.04

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (3)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

10

μAdc

Drain-Source Breakdown Voltage

(ID = 50 mA, VGS = 0 Vdc)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

IDSS

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IDSS

—

10

μAdc

On Characteristics

Gate Threshold Voltage (3)

(VDS = 10 Vdc, ID = 320 μAdc)

VGS(th)

1

1.6

2.5

Vdc

Gate Quiescent Voltage (4)

(VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test)

VGS(Q)

2

2.6

3.5

Vdc

Drain-Source On-Voltage (3)

(VGS = 10 Vdc, ID = 1.58 Adc)

VDS(on)

—

0.25

—

Vdc

Dynamic Characteristics (3,5)

Reverse Transfer Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

0.92

—

pF

Output Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

54.5

—

pF

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

373

—

pF

Functional Tests (4) (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 90 W Avg., f = 860 MHz,

DVB-T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.

Power Gain

Gps

21.5

22.5

24.5

dB

Drain Efficiency

ηD

26

28

—

%

Adjacent Channel Power Ratio

ACPR

—

-62

-59

dBc

Input Return Loss

IRL

—

-4

-2

dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

3. Each side of device measured separately.

4. Measurement made with device in push-pull configuration.

5. Part internally input matched.

(continued)

Similar Part No. - MRF6VP3450HR6

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MRF6VP3450HR6	642Kb / 18P	RF Power Field Effect Transistors
Freescale Semiconductor...	MRF6VP3450HR6	1Mb / 18P	RF Power Field Effect Transistors
NXP Semiconductors	MRF6VP3450HR6	1Mb / 18P	N-Channel Enhancement-Mode Lateral MOSFET Rev. 4, 4/2010
Freescale Semiconductor...	MRF6VP3450HR6	1Mb / 18P	RF Power Field Effect Transistors

More results

Similar Description - MRF6VP3450HR6

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MRF6S19140HR3	404Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S23140HR3	434Kb / 12P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V2300NR1	522Kb / 14P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V4300NBR5	822Kb / 15P	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
	MRFE6S8046NR1	445Kb / 17P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF7S15100HR3	240Kb / 13P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S18100NR1	769Kb / 21P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V14300HR3	643Kb / 10P	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
	MRF1550NT1	288Kb / 13P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF1535NT1	662Kb / 19P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF9045LR1	397Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

More results

MRF6VP3450HR6 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

MRF6VP3450HR6 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

Similar Part No. - MRF6VP3450HR6

Similar Description - MRF6VP3450HR6

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL