MMH3111NT1

1

RF Device Data

Freescale Semiconductor

MMH3111NT1

250-4000 MHz, 12 dB

22.5 dBm

GaAs HFET

Heterostructure Field Effect

Transistor (GaAs HFET)

Broadband High Linearity Amplifier

The MMH3111NT1 is a General Purpose Amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small -signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as Cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small -signal RF.

Features

• Frequency: 250 to 4000 MHz

• P1dB: 22.5 dBm @ 900 MHz

• Small-Signal Gain: 12 dB @ 900 MHz

• Third Order Output Intercept Point: 44 dBm @ 900 MHz

• Single 5 Volt Supply

• Internally Prematched to 50 Ohms

• Internally Biased

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

CASE 1514-02, STYLE 2

SOT-89

PLASTIC

1 2

3

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small -Signal Gain

(S21)

12

11.3

10

dB

Input Return Loss

(S11)

IRL

-14

-15

-16

dB

Output Return Loss

(S22)

ORL

-14

-19

-14

dB

Power Output @1dB

Compression

P1db

22.5

22

22

dBm

Third Order Output

Intercept Point

IP3

44

44

42

dBm

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

300

mA

RF Input Power

10

dBm

Storage Temperature Range

-65 to +150

°C

150

°C

2. For reliable operation, the junction temperature should not

exceed 150°C.

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

37.5

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MMH3111NT1

Rev. 1, 4/2008

Freescale Semiconductor

Technical Data

© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.