MD7P19130HR3 MD7P19130HSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN - PCS/cellular radio and WLL

applications.

Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz,

Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain — 20 dB

Drain Efficiency — 30%

Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -36 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW

Output Power

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-6.0, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

Document Number: MD7P19130H

Rev. 0, 5/2008

Freescale Semiconductor

Technical Data

1930 -1990 MHz, 40 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

MD7P19130HR3

MD7P19130HSR3

CASE 465H-02, STYLE 1

NI-780S-4

MD7P19130HSR3

CASE 465M-01, STYLE 1

NI-780-4

MD7P19130HR3

(Top View)

32

Figure 1. Pin Connections

© Freescale Semiconductor, Inc., 2008. All rights reserved.