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2N3439 Datasheet(PDF) 2 Page - STMicroelectronics |
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2N3439 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 17.5 175 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) for 2N3439 VCB = 360 V for 2N3440 VCB = 250 V 20 20 µA µA ICEO Collector Cut-off Current (IB = 0) for 2N3439 VCE = 300 V for 2N3440 VCE = 200 V 20 50 µA µA ICEX Collector Cut-off Current (VBE = -1.5V) for 2N3439 VCE = 450 V for 2N3440 VCE = 300 V 500 500 µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 6 V 20 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 50 mA for 2N3439 for 2N3440 350 250 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 50 mA IB = 4 mA 0.5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 50 mA IB = 4 mA 1.3 V hFE ∗ DC Current Gain IC = 20 mA VCE = 10 V IC = 2 mA VCE = 10 V for 2N3439 40 30 160 hFE Small Signal Current Gain IC = 5 mA VCE = 10 V f = 1KHz 25 fT Transition frequency IC = 5 mA VCE = 10 V f = 5MHz 15 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2N3439 / 2N3440 2/4 |
Similar Part No. - 2N3439_00 |
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Similar Description - 2N3439_00 |
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