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2N1893 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N1893
Description  SMALL SIGNAL NPN TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 90 V
VCB = 90 V
TC = 150
oC
10
15
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
120
V
V(BR)CER
∗ Collector-Emitter
Breakdown Voltage
(RBE
≤ 10 Ω)
IC = 10 mA
100
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
80
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
µA
7V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
1.2
5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
0.82
0.96
0.9
1.3
V
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
TC = -55
oC
20
35
40
20
50
80
80
40
120
hfe
Small Signal Current
Gain
IC = 1 mA
VCE = 5 V
f = 1KHz
IC = 5 mA
VCE = 10 V
f = 1KHz
30
45
70
85
150
fT
Transition Frequency
IC = 50 mA
VCE = 10 V f = 20MHz
50
70
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
13
15
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
55
85
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2N1893
2/5




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