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BDX53C Datasheet(PDF) 3 Page - STMicroelectronics

Part # BDX53C
Description  Complementary power Darlington transistors
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BDX53C Datasheet(HTML) 3 Page - STMicroelectronics

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BDX53B - BDX53C - BDX54B - BDX54C
Electrical characteristics
3/7
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Note:
For PNP types voltage and current values are negative.
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCEO(sus)
(1)
1.
Pulsed: pulse duration = 300
µs, duty cycle 1.5%
Collector-emitter
sustaining voltage (IB = 0)
IC = 100 mA
for BDX53B - BDX54B
for BDX53C - BDX54C
80
100
V
V
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
for BDX53B - BDX54B
0.2
mA
VCB = 100 V
for BDX53C - BDX54C
0.2
mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 40 V
for BDX53B - BDX54B
0.5
mA
VCE = 50 V
for BDX53C - BDX54C
0.5
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
2mA
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 3 A;
IB = 12 mA
2V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 3 A;
IB = 12 mA
2.5
V
hFE
(1)
DC current gain
IC = 3 A;
VCE = 3 V
750
VF
(1)
Diode forward voltage
IF = 3 A;
IF = 8 A;
1.8
2.5
2.5
V
V


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