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FDW2512NZ Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDW2512NZ Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 11 page FDW2512NZ Rev. A1 www.fairchildsemi.com 3 Switching Characteristics (V GS = 4.5V) Drain-Source Diode Characteristics Notes: 1. RθJA is 77 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. 2. RθJA is 114 oC/W (steady state) when mounted on a mininum copper pad on FR-4. 3. The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4 tON Turn-On Time VDD = 10V, ID = 6.0A VGS = 4.5V, RGS = 16Ω - - 98 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 57 - ns td(OFF) Turn-Off Delay Time - 47 - ns tf Fall Time - 58 - ns tOFF Turn-Off Time - - 158 ns VSD Source to Drain Diode Voltage ISD = 1.3A - 0.7 1.2 V trr Reverse Recovery Time ISD = 6.0A, dISD/dt = 100A/µs- - 24 ns QRR Reverse Recovered Charge ISD = 6.0A, dISD/dt = 100A/µs- - 13 nC |
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