©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

EGP20A - EGP20K Rev. A

July 2007

EGP20A - EGP20K

2.0 Ampere Glass Passivated High Efficiency Rectifiers

Features

• Glass passivated cavity-free junction

• High surge current capability

• Low leakage current

• Superfast recovery time for high efficiency

• Low forward voltage, high current capability

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

Symbol

Parameter

Value

Units

Average Rectified Current

°C

2.0

A

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

75

A

Total Device Dissipation

Derate above 25

°C

3.13

25

W

mW

°C

Thermal Resistance, Junction to Ambient

40

°C/W

Thermal Resistance, Junction to Lead

15

°C/W

Junction and Storage Temperature Range

-65 ~ 150

°C

Parameter

Device

Units

20A

20B

20C

20D

20F

20G

20J

20K

Peak Repetitive Reverse Voltage

50

100

150

200

300

400

600

800

V

Maximum RMS Voltage

35

70

105

140

210

280

420

560

V

50

100

150

200

300

400

600

800

V

Maximum Reverse Current

°C

°C

5.0

100

μA

μA

Maximum Reverse Recovery Time

50

75

nS

Maximum Forward Voltage @ 2.0 A

0.95

1.25

1.7

V

Typical Junction Capacitance

70

45

pF

DO-15 Glass case

COLOR BAND DENOTES CATHODE