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FOD410SDV Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FOD410SDV Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4 3 Electrical Characteristics (T A = 25°C Unless otherwise specified) Individual Component Characteristics Transfer Characteristics *Typical values at TA = 25°C Symbol Parameters Test Conditions Device Min. Typ.* Max Units EMITTER VF Input Forward Voltage IF = 20mA All 1.25 1.5 V IR Reverse Leakage Current VR = 6V All 0.0001 10 µA DETECTOR ID(RMS) Peak Blocking Current, Either Direction IF = 0, TA = 100°C (2) VD = 800V FOD4108, FOD4118 3 100 µA VD = 600V FOD410, FOD4116 IR(RMS) Reverse Current TA = 100°C VD = 800V FOD4108, FOD4118 3 100 µA VD = 600V FOD410, FOD4116 dv/dt Critical Rate of Rise of Off-State Voltage IF = 0 (4) (Fig. 11) 10,000 V/µs Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units IFT LED Trigger Current Main Terminal Voltage = 5V(3) FOD410, FOD4108 0.65 2.0 mA FOD4116, FOD4118 0.65 1.3 VTM Peak On-State Voltage, Either Direction ITM = 300 mA peak, IF = rated IFT All 2.2 3 V IH Holding Current, Either Direction VT = 3V All 200 500 µA IL Latching Current VT = 2.2V All 5 mA tON Turn-On Time PF = 1.0, IT = 300mA VRM = VDM = 565 VAC FOD4108 60 µs VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 tOFF Turn-Off Time VRM = VDM = 565 VAC FOD4108 52 µs VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 dv/dtcrq Critical Rate of Rise of Voltage at Current Commutation VD = 0.67 VDRM, di/dtcrq ≤ 15 A/ms Tj = 25°C All 10,000 V/µs Tj = 80°C 5,000 di/dtcr Critical Rate of Rise of On-State Current All 8 A/µs dV(IO)/dt Critical Rate of Rise of Coupled Input/Output Voltage IT = 0A, VRM = VDM = 424VAC All 10,000 V/µs |
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