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tm April 2007 ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B www.fairchildsemi.com 1 FDS8876 N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2m Ω Features rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications DC/DC converters SO-8 Branding Dash 1 5 2 3 4 4 3 2 1 5 6 7 8 |
