Electronic Components Datasheet Search |
|
FDP150N10 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
|
FDP150N10 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDP150N10 Rev. A www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 10 100 0.02 *Notes: 1. 250µs Pulse Test 2. TC = 25 o C VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V VDS,Drain-Source Voltage[V] 500 2 345678 1 10 100 1000 25 o C -55 o C 150 o C *Notes: 1. VDS = 20V 2. 250µs Pulse Test VGS,Gate-Source Voltage[V] 0.20.4 0.60.8 1.01.2 1.41.6 1 10 100 *Notes: 1. V GS = 0V 2. 250µs Pulse Test 150 o C V SD, Body Diode Forward Voltage [V] 25 o C 500 0 100 200 300 5 10 15 20 25 30 *Note: TC = 25 o C VGS = 20V VGS = 10V ID, Drain Current [A] 0 102030405060 0 2 4 6 8 10 *Note: ID = 49A VDS = 25V VDS = 50V VDS = 80V Qg, Total Gate Charge [nC] 0.1 1 10 0 1000 2000 3000 4000 5000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 |
Similar Part No. - FDP150N10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |