FDD8447L Rev.C

3

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2

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain to Source Breakdown Voltage

40

V

∆

Breakdown Voltage Temperature

Coefficient

35

mV/°C

Zero Gate Voltage Drain Current

1

µA

Gate to Source Leakage Current

±100

nA

On Characteristics

Gate to Source Threshold Voltage

1.0

1.9

3.0

V

∆

Gate to Source Threshold Voltage

Temperature Coefficient

-5

mV/°C

Static Drain to Source On Resistance

7.0

8.5

m

Ω

8.5

11.0

10.4

14.0

Forward Transconductance

58

S

(Note 2)

Dynamic Characteristics

Input Capacitance

f = 1MHz

1970

pF

Output Capacitance

250

pF

Reverse Transfer Capacitance

150

pF

Gate Resistance

f = 1MHz

1.27

Ω

Switching Characteristics

Turn-On Delay Time

12

21

ns

Rise Time

12

21

ns

Turn-Off Delay Time

38

61

ns

Fall Time

9

18

ns

37

52

nC

20

28

nC

Gate to Source Gate Charge

6

nC

Gate to Drain “Miller” Charge

7

nC

Drain-Source Diode Characteristics

Notes:

2: Pulse Test: Pulse Width < 300

µs, Duty cycle < 2.0%.

3:

Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.

4

b. 96°C/W when mounted on a minimum pad.

----------------

Maximum Continuous Drain-Source Diode Forward Current

(Note 1a)

2.6

A

Source to Drain Diode Forward Voltage

(Note 2)

0.8

1.2

V

Reverse Recovery Time

22

ns

Reverse Recovery Charge

11

nC