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FDMS5352 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMS5352 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  www.fairchildsemi.com 2 ©2008 Fairchild Semiconductor Corporation FDMS5352 Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 57 mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 13.6A 5.6 6.7 m Ω VGS = 4.5V, ID = 12.3A 6.7 8.2 VGS = 10V, ID = 13.6A, TJ = 125°C 9.7 11.6 gFS Forward Transconductance VDD = 5V, ID = 13.6A 76 S Dynamic Characteristics Ciss Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz 5220 6940 pF Coss Output Capacitance 410 545 pF Crss Reverse Transfer Capacitance 225 335 pF Rg Gate Resistance f = 1MHz 1.3 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 30V, ID = 13.6A, VGS = 10V, RGEN = 6Ω 19 34 ns tr Rise Time 11 21 ns td(off) Turn-Off Delay Time 58 93 ns tf Fall Time 7 15 ns Qg Total Gate Charge VGS=0Vto10V VDD = 30V, ID = 13.6A 93 131 nC Qg Total Gate Charge VGS = 0V to 5V 48 67 nC Qgs Gate to Source Charge 14 nC Qgd Gate to Drain “Miller” Charge 17 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 13.6A (Note 2) 0.8 1.3 V VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 trr Reverse Recovery Time IF = 13.6A, di/dt = 100A/µs 39 63 ns Qrr Reverse Recovery Charge 48 77 nC NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 20A, VDD = 60V, VGS = 10V a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. |
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