STP80NF55-06FP datasheet(3/6 Pages) STMICROELECTRONICS

Part #	STP80NF55-06FP

Description	N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 6 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay T ime

Rise Time

VDD =27 V

I D =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

35

240

ns

Qg

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =44 V

ID =80 A

VGS = 10 V

178

29

61

230

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay T ime

Fall T ime

VDD =27 V

ID =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

260

80

ns

td(off)

tr(Voff)

tf

tc

Turn-off Delay T ime

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =44 V

I D =80 A

RG =4.7

Ω

VGS =10 V

(Induct ive Load, see fig. 5)

225

55

145

205

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

80

320

A

VSD (

∗)Forward On Voltage

ISD =80 A

VGS =0

1. 5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 80 A

di/ dt = 100 A/

µs

VDD =20 V

TJ =150

oC

(see t est circuit, f ig. 5)

80

0.24

6

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STP80NF55-06/FP

3/6

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