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FGA180N33ATD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGA180N33ATD
Description  330V, 180A PDP Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA180N33ATD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGA180N33ATD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
110
0
2000
4000
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
0
4
8
121620
0
4
8
12
16
20
180A
IC = 20A
40A
90A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
0
30
60
90
120
150
180
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
200V
V
CC = 100V
Gate Charge, Qg [nC]
1
10
100
1000
0.1
1
10
100
1000
DC Operation
I
C MAX (Continuous)
I
C MAX (Pulse)
1ms
10ms
*Notes:
1. TC = 25
o
C
2. TJ = 150
o
C
3. Single Pulse
10µs
100µs
Collector-Emitter Voltage, VCE [V]
0
20406080
100
100
1000
5000
70
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG [Ω]
0
20
406080
100
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]
500
Gate Resistance
Gate Resistance


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