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FGH60N60UFDTU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGH60N60UFDTU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FGH60N60UFD Rev. A Package Marking and Ordering Information Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGH60N60UFD FGH60N60UFDTU TO-247 Tube 30ea - Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ∆BV CES ∆T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA -0.67 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V -1.9 2.4 V IC = 60A, VGE = 15V, TC = 125 oC -2.1 - V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 2855 - pF Coes Output Capacitance - 325 - pF Cres Reverse Transfer Capacitance - 110 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25 oC -23 - ns tr Rise Time - 58 - ns td(off) Turn-Off Delay Time - 130 - ns tf Fall Time - 40 80 ns Eon Turn-On Switching Loss - 1.81 - mJ Eoff Turn-Off Switching Loss - 0.81 - mJ Ets Total Switching Loss - 2.62 - mJ td(on) Turn-On Delay Time VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125 oC -22 - ns tr Rise Time - 61 - ns td(off) Turn-Off Delay Time - 141 - ns tf Fall Time - 63 - ns Eon Turn-On Switching Loss - 1.92 - mJ Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 3.15 - mJ Qg Total Gate Charge VCE = 400V, IC = 60A, VGE = 15V - 188 - nC Qge Gate to Emitter Charge - 21 - nC Qgc Gate to Collector Charge - 97 - nC |
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