STP4NB50 datasheet(3/7 Pages) STMICROELECTRONICS

Part #	STP4NB50

Description	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP4NB50 - STP4NB50FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 250V, ID = 1.9 A

RG =4.7Ω VGS = 10V

(see test circuit, Figure 3)

11

ns

tr

Rise Time

8

ns

Qg

Total Gate Charge

VDD = 400V, ID = 3.8 A,

VGS = 10V

15

21

nC

Qgs

Gate-Source Charge

6.5

nC

Qgd

Gate-Drain Charge

5

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID = 3.8 A,

RG = 4.7Ω, VGS =10V

(see test circuit, Figure 5)

8ns

tf

Fall Time

5

ns

tc

Cross-over Time

14

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

3.8

A

ISDM (2)

Source-drain Current (pulsed)

15.2

A

VSD (1)

Forward On Voltage

ISD = 3.8 A, VGS =0

1.6

V

trr

Reverse Recovery Time

ISD = 3.8 A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

245

ns

Qrr

Reverse Recovery Charge

980

nC

IRRM

Reverse Recovery Current

9

A

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