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STP4NB50 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP4NB50 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 7 page 3/7 STP4NB50 - STP4NB50FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 1.9 A RG =4.7Ω VGS = 10V (see test circuit, Figure 3) 11 ns tr Rise Time 8 ns Qg Total Gate Charge VDD = 400V, ID = 3.8 A, VGS = 10V 15 21 nC Qgs Gate-Source Charge 6.5 nC Qgd Gate-Drain Charge 5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 3.8 A, RG = 4.7Ω, VGS =10V (see test circuit, Figure 5) 8ns tf Fall Time 5 ns tc Cross-over Time 14 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 3.8 A ISDM (2) Source-drain Current (pulsed) 15.2 A VSD (1) Forward On Voltage ISD = 3.8 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 3.8 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 245 ns Qrr Reverse Recovery Charge 980 nC IRRM Reverse Recovery Current 9 A |
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