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IRFR1018EPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR1018EPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  3/8/08 Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET PD - 97129 GD S Gate Drain Source IRFR1018EPbF IRFU1018EPbF Notes through are on page 2 S D G D-Pak IRFR1018EPbF I-Pak IRFU1018EPbF VDSS 60V RDS(on) typ. 7.1m: max. 8.4m: ID (Silicon Limited) 79A c ID (Package Limited) 56A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) A IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 1.32 RθJA Junction-to-Ambient (PCB Mount) jk ––– 40 RθJA Junction-to-Ambient k ––– 110 °C/W 300 Max. 79 c 56 315 88 47 56 c 11 110 21 -55 to + 175 ± 20 0.76 |
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